• HGTP7N60A4
  • HGTP7N60A4
  • HGTP7N60A4
  • HGTP7N60A4
  • HGTP7N60A4
Срок поставки и цена – по запросу

IGBT, N, TO-220; Transistor Type:IGBT; DC Collector Current:34A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:125W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:34A; Current Temperature:25°C; Fall Time tf:45ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220AB; Pin Format:GCE; Power Dissipation Max:125W; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Power Dissipation Ptot Max:125W; Pulsed Current Icm:56A; Rise Time:11ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

DC Collector Current34A
Collector Emitter Saturation Voltage Vce(on)2.7V
Power Dissipation Pd125W
Collector Emitter Voltage V(br)ceo600V
Transistor Case StyleTO-220AB
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (15-Jun-2015)
Current Ic Continuous a Max34A
Current Temperature25°C
Fall Time tf45ns
Full Power Rating Temperature25°C
No. of Transistors1
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
Pin FormatGCE
Power Dissipation Max125W
Power Dissipation Ptot Max125W
Pulsed Current Icm56A
Rise Time11ns
Termination TypeThrough Hole
Transistor PolarityN Channel
Transistor TypeIGBT
Voltage Vces600V
polarityN-Channel
breakdown_voltage_collector_to_emitter600 V
voltage_rating_dc600 V
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
rise_time11.0 ns
mounting_styleThrough Hole
packagingTube
lifecycle_statusNot Recommended for New Designs
rohs_statusCompliant
pin_count3
power_dissipation125 W
current_rating34.0 A
Показать остальные свойства..

Аналоги

Ранее просмотренные товары