MOCD207R2M Купить в Москве

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The MOCD207M device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. It is ideally suited for high density applications and eliminates the need for through-the-board mounting.

Количество в упаковке	2500
Корпус	SO8-150-1.27
Вес	0.276 г
case_package	SOIC
power_dissipation	250 mW
lead_free_status	Lead Free
reach_svhc_compliance	No SVHC
rise_time	1.60 µs
mounting_style	Surface Mount
isolation_voltage	2.50 kV
packaging	Cut Tape (CT), Tape & Reel (TR)
input_voltage_dc	1.25 V
number_of_circuits	2
input_current	60.0 mA
lifecycle_status	Active
output_voltage	70.0 V
rohs_status	Compliant
pin_count	8
number_of_channels	2
No. of Channels	2Channels
Optocoupler Case Style	SOIC
No. of Pins	8Pins
Forward Current If Max	60mA
Isolation Voltage	2.5kV
CTR Min	100%
Collector Emitter Voltage V(br)ceo	70V
Packaging	Cut Tape
Product Range	-
SVHC	No SVHC (15-Jun-2015)
Approval Bodies	UL
Approval Category	UL Recognised
Current Transfer Ratio Max	200%
Current Transfer Ratio Min	100%
Current Transfer Ratio Typ	150%
External Depth	3.91mm
External Length / Height	3.38mm
External Width	4.88mm
Fall Time tf	2.2µs
Forward Current If(AV)	10mA
Input Current	30mA
Lead Spacing	1.27mm
Operating Temperature Max	100°C
Operating Temperature Min	-40°C
Operating Temperature Range	-40°C to +100°C
Optocoupler Output Type	Phototransistor
Output Voltage	70V
Rise Time	1.6µs
Row Pitch	5.94mm