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The MOCD207M device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. It is ideally suited for high density applications and eliminates the need for through-the-board mounting.
| Количество в упаковке | 2500 |
| Корпус | SO8-150-1.27 |
| Вес | 0.276 г |
| case_package | SOIC |
| power_dissipation | 250 mW |
| lead_free_status | Lead Free |
| reach_svhc_compliance | No SVHC |
| rise_time | 1.60 µs |
| mounting_style | Surface Mount |
| isolation_voltage | 2.50 kV |
| packaging | Cut Tape (CT), Tape & Reel (TR) |
| input_voltage_dc | 1.25 V |
| number_of_circuits | 2 |
| input_current | 60.0 mA |
| lifecycle_status | Active |
| output_voltage | 70.0 V |
| rohs_status | Compliant |
| pin_count | 8 |
| number_of_channels | 2 |
| No. of Channels | 2Channels |
| Optocoupler Case Style | SOIC |
| No. of Pins | 8Pins |
| Forward Current If Max | 60mA |
| Isolation Voltage | 2.5kV |
| CTR Min | 100% |
| Collector Emitter Voltage V(br)ceo | 70V |
| Packaging | Cut Tape |
| Product Range | - |
| SVHC | No SVHC (15-Jun-2015) |
| Approval Bodies | UL |
| Approval Category | UL Recognised |
| Current Transfer Ratio Max | 200% |
| Current Transfer Ratio Min | 100% |
| Current Transfer Ratio Typ | 150% |
| External Depth | 3.91mm |
| External Length / Height | 3.38mm |
| External Width | 4.88mm |
| Fall Time tf | 2.2µs |
| Forward Current If(AV) | 10mA |
| Input Current | 30mA |
| Lead Spacing | 1.27mm |
| Operating Temperature Max | 100°C |
| Operating Temperature Min | -40°C |
| Operating Temperature Range | -40°C to +100°C |
| Optocoupler Output Type | Phototransistor |
| Output Voltage | 70V |
| Rise Time | 1.6µs |
| Row Pitch | 5.94mm |
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