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N CHANNEL JFET, -50V, TO-92; Transistor; N CHANNEL JFET, -50V, TO-92; Transistor Type:RF FET; Breakdown Voltage Vbr:-50V; Gate-Source Cutoff Voltage Vgs(off) Max:-1.5V; Power Dissipation Pd:360mW; Operating Temperature Range:-55°C to +125°C; No. of Pins:3
| Breakdown Voltage Vbr | -50V |
| Zero Gate Voltage Drain Current Idss Min | 500 A |
| Zero Gate Voltage Drain Current Idss Max | 12mA |
| Gate-Source Cutoff Voltage Vgs(off) Max | -1.5V |
| Transistor Type | RF FET |
| polarity | N-Channel |
| breakdown_voltage_gate_to_source | -30.0 V |
| power_dissipation | 360 mW |
| breakdown_voltage_drain_to_source | -1.50 V |
| mounting_style | Through Hole |
| case_package | TO-92 |
| rohs_status | Non-Compliant |
| pin_count | 3 |
| breakdown_voltage | -50.0 V |