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PHOTOTRANSISTOR, SMD; Transistor Polarity:NPN; Wavelength Typ:900nm; Power Consumption:75mW; Viewing Angle:15°; No. of Pins:2; Collector Emitter Voltage Vces:0.4V; Continuous Collector Current Ic Max:5.1mA; Current Ic Typ:2.9mA; Dark Current:100nA; Fall Time tf:6µs; Half Angle:15°; Nom Sensitivity @ mW/cm²:2.9mA @ 1mW / cm²; Operating Temperature Max:85°C; Operating Temperature Min:-30°C; Operating Temperature Range:-30°C to +85°C; Package / Case:SMD Compact Thin; Peak Wavelength:900nm; Power Dissipation Pd:75mW; Power Dissipation Pd:75mW; Rise Time:5µs; Storage Temperature Max:95°C; Storage Temperature Min:-40°C; Termination Type:SMD; Transistor Type:Photo
| polarity | NPN |
| peak_wavelength | 900 nm |
| power_dissipation | 75.0 mW |
| viewing_angle | 15 ° |
| lead_free_status | Lead Free |
| mounting_style | Surface Mount |
| packaging | Cut Tape (CT) |
| rise_time | 5.00 µs |
| wavelength | 900 nm |
| rohs_status | Compliant |
| output_current | 20.0 mA (max) |
| pin_count | 2 |
| power_consumption | 75.0 mW |
| Wavelength Typ | 900nm |
| Viewing Angle | 15° |
| Power Consumption | 75mW |
| No. of Pins | 2Pins |
| Transistor Case Style | SMD |
| Packaging | Cut Tape |
| Product Range | - |
| Automotive Qualification Standard | - |
| MSL | - |
| Angle of Half Sensitivity ± | 15° |
| Collector Emitter Saturation Voltage Vce(on) | 0.4V |
| Continuous Collector Current Ic Max | 5.1mA |
| Current Ic Typ | 2.9mA |
| Dark Current | 100nA |
| Fall Time tf | 6µs |
| Nom Sensitivity @ mW/cmІ | 2.9mA @ 1mW/cmІ |
| Operating Temperature Max | 85°C |
| Operating Temperature Min | -30°C |
| Operating Temperature Range | -30°C to +85°C |
| Peak Wavelength | 900nm |
| Rise Time | 5µs |
| Storage Temperature Max | 95°C |
| Storage Temperature Min | -40°C |
| Transistor Polarity | NPN |
| Transistor Type | Photo |