• STGW20NC60VD
  • STGW20NC60VD
  • STGW20NC60VD
  • STGW20NC60VD
Срок доставки – по запросу
Цена – по запросу
итого  цена по запросу

IGBT, 600V, 20A, TO-247; Transistor Type:IGBT; DC Collector Current:60A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic @ Vce Sat:20A; Current Ic Continuous a Max:60A; Current Temperature:25°C; Fall Time tf:75ns; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:TO-247; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Power Dissipation Ptot Max:200W; Pulsed Current Icm:100A; Rise Time:11.5ns; SMD Marking:.; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

DC Collector Current60A
Collector Emitter Saturation Voltage Vce(on)2.5V
Power Dissipation Pd200W
Collector Emitter Voltage V(br)ceo600V
Transistor Case StyleTO-247
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (17-Dec-2015)
Current Ic @ Vce Sat20A
Current Ic Continuous a Max60A
Current Temperature25°C
Fall Time tf75ns
Full Power Rating Temperature25°C
Junction Temperature Tj Max150°C
Junction Temperature Tj Min-55°C
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
Power Dissipation Max200W
Power Dissipation Ptot Max200W
Pulsed Current Icm100A
Rise Time11.5ns
Termination TypeThrough Hole
Transistor PolarityN Channel
Transistor TypeIGBT
Voltage Vces600V
Количество в упаковке30
КорпусTO-247
Вес6.715 г
polarityN-Channel
breakdown_voltage_collector_to_emitter600 V
voltage_rating_dc600 V
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
rise_time11.5 ns
mounting_styleThrough Hole
packagingTube
case_packageTO-247
lifecycle_statusActive
rohs_statusCompliant
pin_count3
power_dissipation200 W
current_rating30.0 A
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